Vishay P-Channel MOSFET, 19 A, 100 V, 3-Pin TO-220AB IRF9540PBF

Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
61 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
AED 41.20
AED 8.24 Each (In a Pack of 5) (ex VAT)
AED 43.26
AED 8.652 Each (In a Pack of 5) (inc. VAT)
Standard
5
AED 41.20
AED 8.24 Each (In a Pack of 5) (ex VAT)
AED 43.26
AED 8.652 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | AED 8.24 | AED 41.20 |
50 - 120 | AED 7.004 | AED 35.02 |
125 - 245 | AED 6.592 | AED 32.96 |
250 - 495 | AED 6.18 | AED 30.90 |
500+ | AED 5.768 | AED 28.84 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
61 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details