Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
60 V
Package Type
MG-WDSON-2
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
78 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.05mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
108 nC @ 10 V
Length
6.35mm
Minimum Operating Temperature
-40 °C
Height
0.53mm
Series
OptiMOS 3
Forward Diode Voltage
1.2V
Product details
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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AED 5.15
Each (On a Reel of 5000) (ex VAT)
AED 5.408
Each (On a Reel of 5000) (inc VAT)
5000
AED 5.15
Each (On a Reel of 5000) (ex VAT)
AED 5.408
Each (On a Reel of 5000) (inc VAT)
5000
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
60 V
Package Type
MG-WDSON-2
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
78 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.05mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
108 nC @ 10 V
Length
6.35mm
Minimum Operating Temperature
-40 °C
Height
0.53mm
Series
OptiMOS 3
Forward Diode Voltage
1.2V
Product details
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.