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SiC N-Channel MOSFET Module, 45 A, 1200 V AG-EASY1B-2 Infineon F423MR12W1M1B76BPSA1

RS Stock No.: 234-8965Brand: InfineonManufacturers Part No.: F423MR12W1M1B76BPSA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

1200 V

Package Type

AG-EASY1B-2

Series

F4

Mounting Type

Chassis Mount

Maximum Drain Source Resistance

0.0225 Ω

Maximum Gate Threshold Voltage

5.55V

Transistor Material

SiC

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AED 574.25

Each (ex VAT)

AED 602.96

Each (inc. VAT)

SiC N-Channel MOSFET Module, 45 A, 1200 V AG-EASY1B-2 Infineon F423MR12W1M1B76BPSA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1AED 574.25
2AED 1,148.50
3AED 1,722.75
4AED 2,297.00
5AED 2,831.00
6AED 3,397.20
7AED 3,963.40
8AED 4,529.60
9AED 5,095.80
10AED 5,635.00
11AED 6,198.50
12AED 6,762.00
13AED 7,325.50
14AED 7,889.00
15AED 8,410.50

AED 574.25

Each (ex VAT)

AED 602.96

Each (inc. VAT)

SiC N-Channel MOSFET Module, 45 A, 1200 V AG-EASY1B-2 Infineon F423MR12W1M1B76BPSA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1AED 574.25
2AED 1,148.50
3AED 1,722.75
4AED 2,297.00
5AED 2,831.00
6AED 3,397.20
7AED 3,963.40
8AED 4,529.60
9AED 5,095.80
10AED 5,635.00
11AED 6,198.50
12AED 6,762.00
13AED 7,325.50
14AED 7,889.00
15AED 8,410.50

Buy in bulk

quantityUnit price
1 - 4AED 574.25
5 - 9AED 566.20
10 - 14AED 563.50
15 - 19AED 560.70
20+AED 557.75

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

1200 V

Package Type

AG-EASY1B-2

Series

F4

Mounting Type

Chassis Mount

Maximum Drain Source Resistance

0.0225 Ω

Maximum Gate Threshold Voltage

5.55V

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more