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Dual SiC N-Channel MOSFET, 131 A, 40 V, 3-Pin PG-TO252-3 Infineon IPD029N04NF2SATMA1

RS Stock No.: 262-5865Brand: InfineonManufacturers Part No.: IPD029N04NF2SATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

131 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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AED 4.35

Each (In a Pack of 5) (ex VAT)

AED 4.568

Each (In a Pack of 5) (inc. VAT)

Dual SiC N-Channel MOSFET, 131 A, 40 V, 3-Pin PG-TO252-3 Infineon IPD029N04NF2SATMA1
Select packaging type

AED 4.35

Each (In a Pack of 5) (ex VAT)

AED 4.568

Each (In a Pack of 5) (inc. VAT)

Dual SiC N-Channel MOSFET, 131 A, 40 V, 3-Pin PG-TO252-3 Infineon IPD029N04NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
5 - 45AED 4.35AED 21.75
50 - 120AED 3.90AED 19.50
125 - 245AED 3.65AED 18.25
250 - 495AED 3.45AED 17.25
500+AED 1.80AED 9.00

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

131 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more