Infineon CoolMOS™ C7 N-Channel MOSFET, 13 A, 700 V, 3-Pin TO-247 IPW65R190C7XKSA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
700 V
Series
CoolMOS™ C7
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
72 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
21.1mm
Length
16.13mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.9V
Height
5.21mm
Country of Origin
China
Product details
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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AED 400.05
AED 13.335 Each (In a Tube of 30) (ex VAT)
AED 420.05
AED 14.002 Each (In a Tube of 30) (inc. VAT)
30
AED 400.05
AED 13.335 Each (In a Tube of 30) (ex VAT)
AED 420.05
AED 14.002 Each (In a Tube of 30) (inc. VAT)
30
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Tube |
|---|---|---|
| 30 - 30 | AED 13.335 | AED 400.05 |
| 60 - 120 | AED 12.652 | AED 379.58 |
| 150 - 270 | AED 12.128 | AED 363.82 |
| 300 - 570 | AED 11.602 | AED 348.08 |
| 600+ | AED 10.815 | AED 324.45 |
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
700 V
Series
CoolMOS™ C7
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
72 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
21.1mm
Length
16.13mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.9V
Height
5.21mm
Country of Origin
China
Product details
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products