Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
75 V
Series
IRF1407PbF
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
4.83mm
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Length
10.67mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Height
16.51mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Stock information temporarily unavailable.
Please check again later.
AED 11.10
Each (In a Pack of 5) (ex VAT)
AED 11.655
Each (In a Pack of 5) (inc. VAT)
5
AED 11.10
Each (In a Pack of 5) (ex VAT)
AED 11.655
Each (In a Pack of 5) (inc. VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | AED 11.10 | AED 55.50 |
25 - 45 | AED 10.00 | AED 50.00 |
50 - 120 | AED 9.30 | AED 46.50 |
125 - 245 | AED 8.65 | AED 43.25 |
250+ | AED 8.10 | AED 40.50 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
75 V
Series
IRF1407PbF
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
4.83mm
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Length
10.67mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Height
16.51mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V