Infineon DirectFET, HEXFET N-Channel MOSFET, 375 A, 60 V DirectFET ISOMETRIC IRF7749L1TRPBF
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
375 A
Maximum Drain Source Voltage
60 V
Series
DirectFET, HEXFET
Package Type
DirectFET ISOMETRIC
Mounting Type
Surface Mount
Maximum Drain Source Resistance
1.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
7.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
9.15mm
Typical Gate Charge @ Vgs
200 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
0.49mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Product details
DirectFET® Power MOSFET, Infineon
The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.
Industry lowest on-resistance in their respective footprints
Extremely low package resistance to minimise conduction losses
Highly efficient dual-sided cooling significantly improves power density, cost and reliability
Low profile of only 0.7mm
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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AED 68.04
AED 17.01 Each (In a Pack of 4) (ex VAT)
AED 71.44
AED 17.86 Each (In a Pack of 4) (inc. VAT)
Standard
4
AED 68.04
AED 17.01 Each (In a Pack of 4) (ex VAT)
AED 71.44
AED 17.86 Each (In a Pack of 4) (inc. VAT)
Standard
4
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Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
375 A
Maximum Drain Source Voltage
60 V
Series
DirectFET, HEXFET
Package Type
DirectFET ISOMETRIC
Mounting Type
Surface Mount
Maximum Drain Source Resistance
1.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
7.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
9.15mm
Typical Gate Charge @ Vgs
200 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
0.49mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Product details
DirectFET® Power MOSFET, Infineon
The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.
Industry lowest on-resistance in their respective footprints
Extremely low package resistance to minimise conduction losses
Highly efficient dual-sided cooling significantly improves power density, cost and reliability
Low profile of only 0.7mm
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products