Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
40 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
24 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.1mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Width
5.1mm
Number of Elements per Chip
2
Height
1.05mm
Minimum Operating Temperature
-55 °C
Country of Origin
Malaysia
Product details
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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AED 0.95
Each (On a Reel of 1500) (ex VAT)
AED 0.998
Each (On a Reel of 1500) (inc VAT)
1500
AED 0.95
Each (On a Reel of 1500) (ex VAT)
AED 0.998
Each (On a Reel of 1500) (inc VAT)
1500
Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
40 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
24 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.1mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Width
5.1mm
Number of Elements per Chip
2
Height
1.05mm
Minimum Operating Temperature
-55 °C
Country of Origin
Malaysia
Product details