Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
730 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
1.9 nC @ 4.5 V, 3.6 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.01mm
Product details
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Please check again later.
AED 1.30
Each (In a Pack of 25) (ex VAT)
AED 1.365
Each (In a Pack of 25) (inc. VAT)
Standard
25
AED 1.30
Each (In a Pack of 25) (ex VAT)
AED 1.365
Each (In a Pack of 25) (inc. VAT)
Standard
25
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
25 - 75 | AED 1.30 | AED 32.50 |
100 - 225 | AED 1.10 | AED 27.50 |
250 - 475 | AED 0.95 | AED 23.75 |
500 - 975 | AED 0.85 | AED 21.25 |
1000+ | AED 0.80 | AED 20.00 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
730 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
1.9 nC @ 4.5 V, 3.6 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.01mm
Product details