Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Package Type
TO-247
Series
STripFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
312 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
15.75mm
Typical Gate Charge @ Vgs
172 nC @ 10 V
Width
5.15mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
20.15mm
Country of Origin
China
Product details
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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AED 334.50
AED 11.15 Each (In a Tube of 30) (ex VAT)
AED 351.22
AED 11.708 Each (In a Tube of 30) (inc. VAT)
30
AED 334.50
AED 11.15 Each (In a Tube of 30) (ex VAT)
AED 351.22
AED 11.708 Each (In a Tube of 30) (inc. VAT)
30
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
30 - 60 | AED 11.15 | AED 334.50 |
90 - 480 | AED 9.35 | AED 280.50 |
510 - 960 | AED 8.30 | AED 249.00 |
990 - 4980 | AED 7.70 | AED 231.00 |
5010+ | AED 6.55 | AED 196.50 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Package Type
TO-247
Series
STripFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
312 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
15.75mm
Typical Gate Charge @ Vgs
172 nC @ 10 V
Width
5.15mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
20.15mm
Country of Origin
China
Product details