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Dual P-Channel MOSFET, 10 A, 30 V, 8-Pin VSON-CLIP Texas Instruments BQ500101DPCT

RS Stock No.: 168-4928Brand: Texas InstrumentsManufacturers Part No.: BQ500101DPCT
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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

30 V

Series

NexFET

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

8 W

Transistor Configuration

Dual Base

Width

3.6mm

Number of Elements per Chip

2

Maximum Operating Temperature

+125 °C

Length

4.6mm

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

0.24V

Height

1mm

Country of Origin

Philippines

Product details

Power MOSFET Modules, Texas Instruments

Half-Bridge NexFET Power Block

MOSFET Transistors, Texas Instruments

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AED 1.10

Each (On a Reel of 250) (ex VAT)

AED 1.155

Each (On a Reel of 250) (inc. VAT)

Dual P-Channel MOSFET, 10 A, 30 V, 8-Pin VSON-CLIP Texas Instruments BQ500101DPCT

AED 1.10

Each (On a Reel of 250) (ex VAT)

AED 1.155

Each (On a Reel of 250) (inc. VAT)

Dual P-Channel MOSFET, 10 A, 30 V, 8-Pin VSON-CLIP Texas Instruments BQ500101DPCT
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

30 V

Series

NexFET

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

8 W

Transistor Configuration

Dual Base

Width

3.6mm

Number of Elements per Chip

2

Maximum Operating Temperature

+125 °C

Length

4.6mm

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

0.24V

Height

1mm

Country of Origin

Philippines

Product details

Power MOSFET Modules, Texas Instruments

Half-Bridge NexFET Power Block

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more