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Toshiba 2SK209-Y(TE85L,F) N-Channel JFET, 10 V, Idss 1.2 to 3.0mA, 3-Pin SOT-346 (SC-59)

RS Stock No.: 760-3126Brand: ToshibaManufacturers Part No.: 2SK209-Y(TE85L,F)
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Idss Drain-Source Cut-off Current

1.2 to 3.0mA

Maximum Drain Source Voltage

10 V

Maximum Gate Source Voltage

-30 V

Maximum Drain Gate Voltage

-50V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-346 (SC-59)

Pin Count

3

Dimensions

2.9 x 1.5 x 1.1mm

Maximum Operating Temperature

+125 °C

Length

2.9mm

Minimum Operating Temperature

-55 °C

Height

1.1mm

Width

1.5mm

Product details

N-channel JFET, Toshiba

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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AED 1.55

Each (In a Pack of 10) (ex VAT)

AED 1.628

Each (In a Pack of 10) (inc. VAT)

Toshiba 2SK209-Y(TE85L,F) N-Channel JFET, 10 V, Idss 1.2 to 3.0mA, 3-Pin SOT-346 (SC-59)
Select packaging type

AED 1.55

Each (In a Pack of 10) (ex VAT)

AED 1.628

Each (In a Pack of 10) (inc. VAT)

Toshiba 2SK209-Y(TE85L,F) N-Channel JFET, 10 V, Idss 1.2 to 3.0mA, 3-Pin SOT-346 (SC-59)
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
10 - 90AED 1.55AED 15.50
100+AED 1.00AED 10.00

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Idss Drain-Source Cut-off Current

1.2 to 3.0mA

Maximum Drain Source Voltage

10 V

Maximum Gate Source Voltage

-30 V

Maximum Drain Gate Voltage

-50V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-346 (SC-59)

Pin Count

3

Dimensions

2.9 x 1.5 x 1.1mm

Maximum Operating Temperature

+125 °C

Length

2.9mm

Minimum Operating Temperature

-55 °C

Height

1.1mm

Width

1.5mm

Product details

N-channel JFET, Toshiba

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more