Toshiba N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS TK10A60W,S4VX(M

Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
9.7 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
30 W
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
4.5mm
Length
10mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.7V
Height
15mm
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
AED 24.98
AED 4.996 Each (In a Pack of 5) (ex VAT)
AED 26.23
AED 5.246 Each (In a Pack of 5) (inc. VAT)
5
AED 24.98
AED 4.996 Each (In a Pack of 5) (ex VAT)
AED 26.23
AED 5.246 Each (In a Pack of 5) (inc. VAT)
5
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Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | AED 4.996 | AED 24.98 |
25 - 45 | AED 3.244 | AED 16.22 |
50 - 120 | AED 3.142 | AED 15.71 |
125 - 245 | AED 3.09 | AED 15.45 |
250+ | AED 3.038 | AED 15.19 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
9.7 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
30 W
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
4.5mm
Length
10mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.7V
Height
15mm
Country of Origin
Japan
Product details