Toshiba TK N-Channel MOSFET, 11.5 A, 600 V, 3-Pin DPAK TK12P60W,RVQ(S
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
340 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
6.1mm
Length
6.6mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
2.3mm
Country of Origin
China
Product details
MOSFET Transistors, Toshiba
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AED 13,440.00
AED 6.72 Each (On a Reel of 2000) (ex VAT)
AED 14,112.00
AED 7.056 Each (On a Reel of 2000) (inc. VAT)
2000
AED 13,440.00
AED 6.72 Each (On a Reel of 2000) (ex VAT)
AED 14,112.00
AED 7.056 Each (On a Reel of 2000) (inc. VAT)
2000
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Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
340 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
6.1mm
Length
6.6mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
2.3mm
Country of Origin
China
Product details
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products