Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+175 °C
Length
5mm
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.5mm
Product details
Dual P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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AED 5.75
Each (Supplied on a Reel) (ex VAT)
AED 6.038
Each (Supplied on a Reel) (inc VAT)
5
AED 5.75
Each (Supplied on a Reel) (ex VAT)
AED 6.038
Each (Supplied on a Reel) (inc VAT)
5
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
5 - 45 | AED 5.75 | AED 28.75 |
50 - 245 | AED 4.95 | AED 24.75 |
250 - 495 | AED 4.05 | AED 20.25 |
500 - 1245 | AED 3.35 | AED 16.75 |
1250+ | AED 3.10 | AED 15.50 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+175 °C
Length
5mm
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.5mm
Product details