Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.89mm
Transistor Material
Si
Typical Gate Charge @ Vgs
20 nC @ 10 V, 8.8 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.9mm
Minimum Operating Temperature
-55 °C
Height
1.04mm
Country of Origin
China
Product details
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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AED 4.10
Each (Supplied on a Reel) (ex VAT)
AED 4.305
Each (Supplied on a Reel) (inc VAT)
5
AED 4.10
Each (Supplied on a Reel) (ex VAT)
AED 4.305
Each (Supplied on a Reel) (inc VAT)
5
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
5 - 45 | AED 4.10 | AED 20.50 |
50 - 245 | AED 3.90 | AED 19.50 |
250 - 495 | AED 2.90 | AED 14.50 |
500 - 1245 | AED 2.70 | AED 13.50 |
1250+ | AED 2.40 | AED 12.00 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.89mm
Transistor Material
Si
Typical Gate Charge @ Vgs
20 nC @ 10 V, 8.8 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.9mm
Minimum Operating Temperature
-55 °C
Height
1.04mm
Country of Origin
China
Product details