Technical Document
Specifications
Brand
VishayMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
480 W
Package Type
ECONO2
Configuration
Dual Half Bridge
Mounting Type
PCB Mount
Channel Type
N
Pin Count
49
Switching Speed
8 to 60kHz
Transistor Configuration
Dual Half Bridge
Dimensions
107.8 x 45.4 x 17mm
Maximum Operating Temperature
+150 °C
Country of Origin
Italy
Product details
IGBT Modules, Vishay
Vishays high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.
Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.
Wide range of industry-standard package styles
Direct mount on heat sink
Choice of PT, NPT, and Trench IGBT technologies
Low-VCE(on) IGBT
Switching frequency from 1 kHz to 150 kHz
Rugged transient performance
High isolation voltage up to 3500 V
100 % lead (Pb)-free and RoHS-compliant
Low thermal resistance
Wide operating temperature range (-40 °C to +175 °C)
IGBT Modules, Vishay
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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AED 1,220.55
Each (In a Box of 12) (ex VAT)
AED 1,281.578
Each (In a Box of 12) (inc VAT)
12
AED 1,220.55
Each (In a Box of 12) (ex VAT)
AED 1,281.578
Each (In a Box of 12) (inc VAT)
12
Technical Document
Specifications
Brand
VishayMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
480 W
Package Type
ECONO2
Configuration
Dual Half Bridge
Mounting Type
PCB Mount
Channel Type
N
Pin Count
49
Switching Speed
8 to 60kHz
Transistor Configuration
Dual Half Bridge
Dimensions
107.8 x 45.4 x 17mm
Maximum Operating Temperature
+150 °C
Country of Origin
Italy
Product details
IGBT Modules, Vishay
Vishays high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.
Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.
Wide range of industry-standard package styles
Direct mount on heat sink
Choice of PT, NPT, and Trench IGBT technologies
Low-VCE(on) IGBT
Switching frequency from 1 kHz to 150 kHz
Rugged transient performance
High isolation voltage up to 3500 V
100 % lead (Pb)-free and RoHS-compliant
Low thermal resistance
Wide operating temperature range (-40 °C to +175 °C)
IGBT Modules, Vishay
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.