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Diodes Inc P-Channel MOSFET, 4.2 A, 20 V, 3-Pin SOT-23 DMP2305U-7

RS Stock No.: 751-4256Brand: DiodesZetexManufacturers Part No.: DMP2305U-7
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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

4.2 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

113 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

1.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

7.6 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.1mm

Country of Origin

China

Product details

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Stock information temporarily unavailable.

AED 30.90

AED 0.309 Each (In a Pack of 100) (ex VAT)

AED 32.44

AED 0.324 Each (In a Pack of 100) (inc. VAT)

Diodes Inc P-Channel MOSFET, 4.2 A, 20 V, 3-Pin SOT-23 DMP2305U-7
Select packaging type

AED 30.90

AED 0.309 Each (In a Pack of 100) (ex VAT)

AED 32.44

AED 0.324 Each (In a Pack of 100) (inc. VAT)

Diodes Inc P-Channel MOSFET, 4.2 A, 20 V, 3-Pin SOT-23 DMP2305U-7
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
100 - 500AED 0.309AED 30.90
600 - 1400AED 0.309AED 30.90
1500+AED 0.258AED 25.75

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

4.2 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

113 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

1.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

7.6 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.1mm

Country of Origin

China

Product details

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more