Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
190 mA
Maximum Drain Source Voltage
250 V
Package Type
SOT-89
Series
SIPMOS®
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
4.5mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
4.9 nC @ 10 V
Width
2.5mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Product details
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
AED 17.32
AED 1.732 Each (In a Pack of 10) (ex VAT)
AED 18.19
AED 1.819 Each (In a Pack of 10) (inc. VAT)
Standard
10
AED 17.32
AED 1.732 Each (In a Pack of 10) (ex VAT)
AED 18.19
AED 1.819 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | AED 1.732 | AED 17.32 |
100 - 240 | AED 1.628 | AED 16.28 |
250 - 490 | AED 1.628 | AED 16.28 |
500 - 990 | AED 1.522 | AED 15.22 |
1000+ | AED 1.418 | AED 14.18 |
Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
190 mA
Maximum Drain Source Voltage
250 V
Package Type
SOT-89
Series
SIPMOS®
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
4.5mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
4.9 nC @ 10 V
Width
2.5mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Product details
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.