Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
600 V
Series
HiperFET, Polar3
Package Type
PLUS247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
1.3 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
5.21mm
Length
16.13mm
Typical Gate Charge @ Vgs
190 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
21.34mm
Minimum Operating Temperature
-55 °C
Country of Origin
United States
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
AED 1,878.98
AED 62.632 Each (In a Tube of 30) (ex VAT)
AED 1,972.93
AED 65.764 Each (In a Tube of 30) (inc. VAT)
30
AED 1,878.98
AED 62.632 Each (In a Tube of 30) (ex VAT)
AED 1,972.93
AED 65.764 Each (In a Tube of 30) (inc. VAT)
30
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Please check again later.
Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
600 V
Series
HiperFET, Polar3
Package Type
PLUS247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
1.3 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
5.21mm
Length
16.13mm
Typical Gate Charge @ Vgs
190 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
21.34mm
Minimum Operating Temperature
-55 °C
Country of Origin
United States
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS