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Nexperia N-Channel MOSFET, 360 mA, 60 V, 3-Pin SOT-23 BSS138P,215

RS Stock No.: 792-0891Brand: NexperiaManufacturers Part No.: BSS138P
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

360 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

420 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

3mm

Typical Gate Charge @ Vgs

0.72 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

Country of Origin

China

Product details

N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors

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Stock information temporarily unavailable.

AED 26.25

AED 0.262 Each (On a Reel of 100) (ex VAT)

AED 27.56

AED 0.275 Each (On a Reel of 100) (inc. VAT)

Nexperia N-Channel MOSFET, 360 mA, 60 V, 3-Pin SOT-23 BSS138P,215
Select packaging type

AED 26.25

AED 0.262 Each (On a Reel of 100) (ex VAT)

AED 27.56

AED 0.275 Each (On a Reel of 100) (inc. VAT)

Nexperia N-Channel MOSFET, 360 mA, 60 V, 3-Pin SOT-23 BSS138P,215
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Reel
100 - 100AED 0.262AED 26.25
200 - 400AED 0.262AED 26.25
500 - 900AED 0.158AED 15.75
1000 - 1900AED 0.158AED 15.75
2000+AED 0.158AED 15.75

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

360 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

420 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

3mm

Typical Gate Charge @ Vgs

0.72 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

Country of Origin

China

Product details

N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more