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Nexperia N-Channel MOSFET, 100 A, 25 V, 4-Pin LFPAK, SOT-669 PSMN0R9-25YLC,115

RS Stock No.: 798-2895Brand: NexperiaManufacturers Part No.: PSMN0R9-25YLC,115
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

25 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

1.25 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.95V

Minimum Gate Threshold Voltage

1.05V

Maximum Power Dissipation

272 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

110 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

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Stock information temporarily unavailable.

AED 28.04

AED 9.345 Each (In a Pack of 3) (ex VAT)

AED 29.44

AED 9.812 Each (In a Pack of 3) (inc. VAT)

Nexperia N-Channel MOSFET, 100 A, 25 V, 4-Pin LFPAK, SOT-669 PSMN0R9-25YLC,115
Select packaging type

AED 28.04

AED 9.345 Each (In a Pack of 3) (ex VAT)

AED 29.44

AED 9.812 Each (In a Pack of 3) (inc. VAT)

Nexperia N-Channel MOSFET, 100 A, 25 V, 4-Pin LFPAK, SOT-669 PSMN0R9-25YLC,115
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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quantityUnit pricePer Pack
3 - 27AED 9.345AED 28.04
30 - 72AED 8.662AED 25.99
75 - 147AED 8.085AED 24.26
150 - 297AED 7.455AED 22.36
300+AED 6.825AED 20.48

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

25 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

1.25 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.95V

Minimum Gate Threshold Voltage

1.05V

Maximum Power Dissipation

272 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

110 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more