Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
3.7mm
Length
6.7mm
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.8mm
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
AED 3,675.00
AED 1.47 Each (On a Reel of 2500) (ex VAT)
AED 3,858.75
AED 1.544 Each (On a Reel of 2500) (inc. VAT)
2500
AED 3,675.00
AED 1.47 Each (On a Reel of 2500) (ex VAT)
AED 3,858.75
AED 1.544 Each (On a Reel of 2500) (inc. VAT)
2500
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Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
3.7mm
Length
6.7mm
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.8mm
Product details