Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
5.6 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Width
6.22mm
Typical Gate Charge @ Vgs
18 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.38mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
AED 14.70
AED 1.47 Each (In a Pack of 10) (ex VAT)
AED 15.44
AED 1.544 Each (In a Pack of 10) (inc. VAT)
Standard
10
AED 14.70
AED 1.47 Each (In a Pack of 10) (ex VAT)
AED 15.44
AED 1.544 Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
5.6 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Width
6.22mm
Typical Gate Charge @ Vgs
18 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.38mm
Minimum Operating Temperature
-55 °C
Product details