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Vishay SQ Rugged P-Channel MOSFET, 17 A, 40 V, 8-Pin SOIC SQ4401EY-T1_GE3

RS Stock No.: 819-3917Brand: VishayManufacturers Part No.: SQ4401EY-T1_GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

40 V

Series

SQ Rugged

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

7.14 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

74 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

1.55mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

AED 106.05

AED 10.605 Each (In a Pack of 10) (ex VAT)

AED 111.35

AED 11.135 Each (In a Pack of 10) (inc. VAT)

Vishay SQ Rugged P-Channel MOSFET, 17 A, 40 V, 8-Pin SOIC SQ4401EY-T1_GE3
Select packaging type

AED 106.05

AED 10.605 Each (In a Pack of 10) (ex VAT)

AED 111.35

AED 11.135 Each (In a Pack of 10) (inc. VAT)

Vishay SQ Rugged P-Channel MOSFET, 17 A, 40 V, 8-Pin SOIC SQ4401EY-T1_GE3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
10 - 40AED 10.605AED 106.05
50 - 90AED 8.452AED 84.52
100 - 240AED 7.402AED 74.02
250 - 490AED 6.878AED 68.78
500+AED 5.722AED 57.22

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

40 V

Series

SQ Rugged

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

7.14 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

74 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

1.55mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more