Vishay P-Channel MOSFET, 1.6 A, 60 V, 4-Pin HVMDIP IRFD9020PBF
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.6 A
Maximum Drain Source Voltage
60 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5mm
Length
6.29mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
6.3V
Height
3.37mm
Country of Origin
Philippines
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
AED 417.15
AED 4.172 Each (In a Tube of 100) (ex VAT)
AED 438.01
AED 4.381 Each (In a Tube of 100) (inc. VAT)
100
AED 417.15
AED 4.172 Each (In a Tube of 100) (ex VAT)
AED 438.01
AED 4.381 Each (In a Tube of 100) (inc. VAT)
100
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Tube |
|---|---|---|
| 100 - 100 | AED 4.172 | AED 417.15 |
| 200 - 400 | AED 4.068 | AED 406.85 |
| 500+ | AED 3.862 | AED 386.25 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.6 A
Maximum Drain Source Voltage
60 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5mm
Length
6.29mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
6.3V
Height
3.37mm
Country of Origin
Philippines
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products