Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.67mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Height
4.83mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
AED 40.42
AED 4.042 Each (In a Pack of 10) (ex VAT)
AED 42.44
AED 4.244 Each (In a Pack of 10) (inc. VAT)
Standard
10
AED 40.42
AED 4.042 Each (In a Pack of 10) (ex VAT)
AED 42.44
AED 4.244 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | AED 4.042 | AED 40.42 |
100 - 240 | AED 3.045 | AED 30.45 |
250 - 490 | AED 2.52 | AED 25.20 |
500 - 990 | AED 2.258 | AED 22.58 |
1000+ | AED 2.152 | AED 21.52 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.67mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Height
4.83mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details