Toshiba N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23 SSM3K339R
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
390 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Number of Elements per Chip
1
Width
1.8mm
Length
2.9mm
Typical Gate Charge @ Vgs
1.1 nC @ 4.2 V
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.7mm
Country of Origin
Thailand
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
AED 31.50
AED 0.63 Each (In a Pack of 50) (ex VAT)
AED 33.08
AED 0.662 Each (In a Pack of 50) (inc. VAT)
Standard
50
AED 31.50
AED 0.63 Each (In a Pack of 50) (ex VAT)
AED 33.08
AED 0.662 Each (In a Pack of 50) (inc. VAT)
Standard
50
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Pack |
|---|---|---|
| 50 - 100 | AED 0.63 | AED 31.50 |
| 150 - 450 | AED 0.525 | AED 26.25 |
| 500 - 950 | AED 0.472 | AED 23.62 |
| 1000+ | AED 0.42 | AED 21.00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
390 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Number of Elements per Chip
1
Width
1.8mm
Length
2.9mm
Typical Gate Charge @ Vgs
1.1 nC @ 4.2 V
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.7mm
Country of Origin
Thailand
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products