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IXYS HiperFET, Polar N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXFP10N80P

RS Stock No.: 194-057Brand: IXYSManufacturers Part No.: IXFP10N80P
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Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

800 V

Series

HiperFET, Polar

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

40 nC @ 10 V

Width

4.83mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.66mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

9.15mm

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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Stock information temporarily unavailable.

AED 26.09

AED 26.09 Each (ex VAT)

AED 27.39

AED 27.39 Each (inc. VAT)

IXYS HiperFET, Polar N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXFP10N80P
Select packaging type

AED 26.09

AED 26.09 Each (ex VAT)

AED 27.39

AED 27.39 Each (inc. VAT)

IXYS HiperFET, Polar N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXFP10N80P
Stock information temporarily unavailable.
Select packaging type

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quantityUnit price
1 - 4AED 26.09
5 - 19AED 24.31
20 - 49AED 22.78
50 - 99AED 19.69
100+AED 18.85

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

800 V

Series

HiperFET, Polar

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

40 nC @ 10 V

Width

4.83mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.66mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

9.15mm

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more