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Toshiba TK N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 TK39N60W,S1VF(S

RS Stock No.: 896-2372Brand: ToshibaManufacturers Part No.: TK39N60W,S1VF(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

600 V

Series

TK

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

270 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

15.94mm

Typical Gate Charge @ Vgs

110 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

5.02mm

Transistor Material

Si

Height

20.95mm

Country of Origin

China

Product details

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

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Stock information temporarily unavailable.

AED 24.26

AED 24.26 Each (ex VAT)

AED 25.47

AED 25.47 Each (inc. VAT)

Toshiba TK N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 TK39N60W,S1VF(S

1

Available in multiples of 1
1AED 24.26
2AED 48.51
3AED 72.76
4AED 97.02
5AED 121.28
6AED 145.53
7AED 169.78
8AED 194.04
9AED 218.30
10AED 200.02
11AED 220.03
12AED 240.03
13AED 260.03
14AED 280.04
15AED 300.04

AED 24.26

AED 24.26 Each (ex VAT)

AED 25.47

AED 25.47 Each (inc. VAT)

Toshiba TK N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 TK39N60W,S1VF(S
Stock information temporarily unavailable.

1

Available in multiples of 1
1AED 24.26
2AED 48.51
3AED 72.76
4AED 97.02
5AED 121.28
6AED 145.53
7AED 169.78
8AED 194.04
9AED 218.30
10AED 200.02
11AED 220.03
12AED 240.03
13AED 260.03
14AED 280.04
15AED 300.04

Stock information temporarily unavailable.

Please check again later.

quantityUnit price
1 - 9AED 24.26
10 - 49AED 20.00
50 - 99AED 18.27
100 - 199AED 17.80
200+AED 17.43

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

600 V

Series

TK

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

270 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

15.94mm

Typical Gate Charge @ Vgs

110 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

5.02mm

Transistor Material

Si

Height

20.95mm

Country of Origin

China

Product details

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more