Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
88 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Typical Gate Charge @ Vgs
26 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
AED 189.00
AED 3.78 Each (In a Tube of 50) (ex VAT)
AED 198.45
AED 3.969 Each (In a Tube of 50) (inc. VAT)
50
AED 189.00
AED 3.78 Each (In a Tube of 50) (ex VAT)
AED 198.45
AED 3.969 Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | AED 3.78 | AED 189.00 |
100 - 200 | AED 3.57 | AED 178.50 |
250+ | AED 3.465 | AED 173.25 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
88 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Typical Gate Charge @ Vgs
26 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details