Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.3 A
Maximum Drain Source Voltage
400 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.8 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
20 nC @ 10 V
Width
4.7mm
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 300V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
AED 5.20
AED 5.20 Each (ex VAT)
AED 5.46
AED 5.46 Each (inc. VAT)
Standard
1
AED 5.20
AED 5.20 Each (ex VAT)
AED 5.46
AED 5.46 Each (inc. VAT)
Stock information temporarily unavailable.
Standard
1
Stock information temporarily unavailable.
Quantity | Unit price |
---|---|
1 - 9 | AED 5.20 |
10 - 49 | AED 4.41 |
50 - 99 | AED 4.15 |
100 - 249 | AED 3.88 |
250+ | AED 3.62 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.3 A
Maximum Drain Source Voltage
400 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.8 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
20 nC @ 10 V
Width
4.7mm
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details