Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
100 V
Package Type
PowerDI3333-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
99 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.31 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.35mm
Typical Gate Charge @ Vgs
25.2 nC @ 10 V
Height
0.8mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.77V
Country of Origin
China
Product details
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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AED 1.35
Each (On a Reel of 2000) (ex VAT)
AED 1.418
Each (On a Reel of 2000) (inc VAT)
2000
AED 1.35
Each (On a Reel of 2000) (ex VAT)
AED 1.418
Each (On a Reel of 2000) (inc VAT)
2000
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
100 V
Package Type
PowerDI3333-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
99 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.31 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.35mm
Typical Gate Charge @ Vgs
25.2 nC @ 10 V
Height
0.8mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.77V
Country of Origin
China
Product details