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Infineon FF50R12RT4HOSA1 Dual IGBT, 50 A 1200 V AG-34MM, Chassis Mount

RS Stock No.: 260-8888PBrand: InfineonManufacturers Part No.: FF50R12RT4HOSA1
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Technical Document

Specifications

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

285 W

Number of Transistors

2

Package Type

AG-34MM

Configuration

Dual

Mounting Type

Chassis Mount

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AED 404.45

Each (Supplied in a Tray) (ex VAT)

AED 424.67

Each (Supplied in a Tray) (inc. VAT)

Infineon FF50R12RT4HOSA1 Dual IGBT, 50 A 1200 V AG-34MM, Chassis Mount
Select packaging type

AED 404.45

Each (Supplied in a Tray) (ex VAT)

AED 424.67

Each (Supplied in a Tray) (inc. VAT)

Infineon FF50R12RT4HOSA1 Dual IGBT, 50 A 1200 V AG-34MM, Chassis Mount
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit price
5 - 9AED 404.45
10 - 49AED 392.05
50+AED 390.10

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

285 W

Number of Transistors

2

Package Type

AG-34MM

Configuration

Dual

Mounting Type

Chassis Mount

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more