Technical Document
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
38 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
15.7 nC @ 10 V
Width
4.93mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
16.13mm
Country of Origin
Korea, Republic Of
Product details
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
Stock information temporarily unavailable.
Please check again later.
AED 2.90
Each (In a Tube of 10) (ex VAT)
AED 3.045
Each (In a Tube of 10) (inc VAT)
10
AED 2.90
Each (In a Tube of 10) (ex VAT)
AED 3.045
Each (In a Tube of 10) (inc VAT)
10
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
10 - 40 | AED 2.90 | AED 29.00 |
50 - 90 | AED 2.00 | AED 20.00 |
100 - 290 | AED 1.95 | AED 19.50 |
300 - 690 | AED 1.90 | AED 19.00 |
700+ | AED 1.90 | AED 19.00 |
Technical Document
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
38 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
15.7 nC @ 10 V
Width
4.93mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
16.13mm
Country of Origin
Korea, Republic Of
Product details
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.