Technical Document
Specifications
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
1 → 5mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Country of Origin
China
Product details
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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AED 1.89
Each (Supplied on a Reel) (inc VAT)
10
AED 1.80
Each (Supplied on a Reel) (ex VAT)
AED 1.89
Each (Supplied on a Reel) (inc VAT)
10
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quantity | Unit price | Per Reel |
---|---|---|
10 - 90 | AED 1.80 | AED 18.00 |
100 - 240 | AED 1.60 | AED 16.00 |
250 - 490 | AED 1.35 | AED 13.50 |
500 - 990 | AED 1.05 | AED 10.50 |
1000+ | AED 0.80 | AED 8.00 |
Technical Document
Specifications
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
1 → 5mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Country of Origin
China
Product details
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.