Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
140 A
Maximum Drain Source Voltage
40 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
4+Tab
Maximum Drain Source Resistance
2.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
83 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.1mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Height
1.05mm
Series
NTMFS5C442N
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
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P.O.A.
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P.O.A.
5
Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
140 A
Maximum Drain Source Voltage
40 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
4+Tab
Maximum Drain Source Resistance
2.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
83 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.1mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Height
1.05mm
Series
NTMFS5C442N
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V