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onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole

RS Stock No.: 181-1864Brand: onsemiManufacturers Part No.: FGH75T65SQDNL4
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Technical Document

Specifications

Brand

onsemi

Maximum Continuous Collector Current

200 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

375 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.8 x 5.2 x 22.74mm

Maximum Operating Temperature

+175 °C

Energy Rating

160mJ

Minimum Operating Temperature

-55 °C

Gate Capacitance

5100pF

Country of Origin

China

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AED 24.00

Each (In a Tube of 450) (ex VAT)

AED 25.20

Each (In a Tube of 450) (inc. VAT)

onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole

450

Available in multiples of 450
450AED 10,800.00
900AED 21,600.00
1350AED 32,400.00
1800AED 43,200.00
2250AED 54,000.00
2700AED 64,800.00
3150AED 75,600.00
3600AED 86,400.00
4050AED 97,200.00
4500AED 108,000.00
4950AED 118,800.00
5400AED 129,600.00
5850AED 140,400.00
6300AED 151,200.00
6750AED 162,000.00

AED 24.00

Each (In a Tube of 450) (ex VAT)

AED 25.20

Each (In a Tube of 450) (inc. VAT)

onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole
Stock information temporarily unavailable.

450

Available in multiples of 450
450AED 10,800.00
900AED 21,600.00
1350AED 32,400.00
1800AED 43,200.00
2250AED 54,000.00
2700AED 64,800.00
3150AED 75,600.00
3600AED 86,400.00
4050AED 97,200.00
4500AED 108,000.00
4950AED 118,800.00
5400AED 129,600.00
5850AED 140,400.00
6300AED 151,200.00
6750AED 162,000.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Maximum Continuous Collector Current

200 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

375 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.8 x 5.2 x 22.74mm

Maximum Operating Temperature

+175 °C

Energy Rating

160mJ

Minimum Operating Temperature

-55 °C

Gate Capacitance

5100pF

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more