Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
68 A
Maximum Drain Source Voltage
80 V
Series
NVTFS6H850N
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Length
3.15mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
3.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Height
0.75mm
AED 78.54
AED 3.142 Each (In a Pack of 25) (ex VAT)
AED 82.47
AED 3.299 Each (In a Pack of 25) (inc. VAT)
Standard
25
AED 78.54
AED 3.142 Each (In a Pack of 25) (ex VAT)
AED 82.47
AED 3.299 Each (In a Pack of 25) (inc. VAT)
Standard
25
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Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
25 - 75 | AED 3.142 | AED 78.54 |
100 - 225 | AED 2.73 | AED 68.24 |
250+ | AED 2.369 | AED 59.22 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
68 A
Maximum Drain Source Voltage
80 V
Series
NVTFS6H850N
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Length
3.15mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
3.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Height
0.75mm