Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
50 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.4mm
Width
4.6mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.3mm
Product details
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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AED 12.75
Each (In a Pack of 5) (ex VAT)
AED 13.388
Each (In a Pack of 5) (inc. VAT)
Standard
5
AED 12.75
Each (In a Pack of 5) (ex VAT)
AED 13.388
Each (In a Pack of 5) (inc. VAT)
Standard
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 5 | AED 12.75 | AED 63.75 |
10 - 95 | AED 10.85 | AED 54.25 |
100 - 495 | AED 8.45 | AED 42.25 |
500 - 995 | AED 7.15 | AED 35.75 |
1000+ | AED 5.95 | AED 29.75 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
50 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.4mm
Width
4.6mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.3mm
Product details