Infineon CoolMOS™ Silicon N-Channel MOSFET, 9 A, 650 V, 3-Pin DPAK IPD60R280CFD7ATMA1

RS Stock No.: 222-4670Brand: InfineonManufacturers Part No.: IPD60R280CFD7ATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.28 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

Transistor Material

Silicon

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AED 9,187.50

AED 3.675 Each (On a Reel of 2500) (ex VAT)

AED 9,646.88

AED 3.859 Each (On a Reel of 2500) (inc. VAT)

Infineon CoolMOS™ Silicon N-Channel MOSFET, 9 A, 650 V, 3-Pin DPAK IPD60R280CFD7ATMA1

2500

Available in multiples of 2500
2500AED 9,187.50
5000AED 18,375.00
7500AED 27,562.50
10000AED 36,750.00
12500AED 45,937.50
15000AED 55,125.00
17500AED 64,312.50
20000AED 73,500.00
22500AED 82,687.50
25000AED 91,875.00
27500AED 101,062.50
30000AED 110,250.00
32500AED 119,437.50
35000AED 128,625.00
37500AED 137,812.50

AED 9,187.50

AED 3.675 Each (On a Reel of 2500) (ex VAT)

AED 9,646.88

AED 3.859 Each (On a Reel of 2500) (inc. VAT)

Infineon CoolMOS™ Silicon N-Channel MOSFET, 9 A, 650 V, 3-Pin DPAK IPD60R280CFD7ATMA1

Stock information temporarily unavailable.

2500

Available in multiples of 2500
2500AED 9,187.50
5000AED 18,375.00
7500AED 27,562.50
10000AED 36,750.00
12500AED 45,937.50
15000AED 55,125.00
17500AED 64,312.50
20000AED 73,500.00
22500AED 82,687.50
25000AED 91,875.00
27500AED 101,062.50
30000AED 110,250.00
32500AED 119,437.50
35000AED 128,625.00
37500AED 137,812.50

Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.28 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more