Cypress Semiconductor SRAM Memory Chip, CY62128EV30LL-45ZXI- 1Mbit

Infineon SRAM, 1MB Memory Size, 45ns Maximum Random Access Time - CY62128EV30LL-45ZXI

This SRAM is a static memory device designed for fast, byte-wide data storage in surface-mount applications. It operates within industrial temperature limits and supports systems that require non-volatile-style data buffering with low access latency and standard supply voltage. The package suits compact circuit designs where board space and mounting reliability are important.

Features and Benefits:

• Low read/write latency at 45ns enabling rapid data transactions
  Operates from 3.6V supply for compatibility with common logic rails
  Organised as 128Kx8 bit providing 128k addressable words
  Surface-mount 32-pin TSOP package simplifies PCB assembly
  Wide operating range -40 to 85°C for industrial environments

Applications

• Suitable for high-speed data buffering in control systems
  Ideal for temporary storage in industrial automation devices
  Used with microcontrollers requiring 8-bit parallel memory
  Can be used for firmware shadowing in embedded platforms
  Suitable for upgrades where low-latency SRAM is required

How many bits are accessed simultaneously during operations?

Each memory access transfers eight bits in parallel according to the 8-bit organisation.

What form factor should be prepared on the PCB for mounting?

Design a footprint for a 32-pin TSOP surface-mount package matching the device’s pin count.

What environmental conditions will the device tolerate reliably?

It functions across a temperature span from -40 to 85°C for industrial-grade operation.

How is memory capacity expressed for system planning?

Capacity is presented as 1MB total, arranged as 128k words of 8 bits each.