Infineon 64kbit Parallel FRAM Memory 28-Pin SOIC, FM16W08-SG

RS Stock No.: 124-2979Brand: Cypress SemiconductorManufacturers Part No.: FM16W08-SG
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Technical Document

Specifications

Memory Size

64kbit

Organisation

8K x 8 bit

Interface Type

Parallel

Data Bus Width

8bit

Maximum Random Access Time

70ns

Mounting Type

Surface Mount

Package Type

SOIC

Pin Count

28

Dimensions

18.11 x 7.62 x 2.37mm

Maximum Operating Supply Voltage

5.5 V

Maximum Operating Temperature

+85 °C

Number of Words

8K

Minimum Operating Temperature

-40 °C

Minimum Operating Supply Voltage

2.7 V

Number of Bits per Word

8bit

Product details

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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AED 44.55

Each (ex VAT)

AED 46.78

Each (inc VAT)

Infineon 64kbit Parallel FRAM Memory 28-Pin SOIC, FM16W08-SG
Select packaging type

AED 44.55

Each (ex VAT)

AED 46.78

Each (inc VAT)

Infineon 64kbit Parallel FRAM Memory 28-Pin SOIC, FM16W08-SG
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit price
1 - 9AED 44.55
10 - 24AED 35.75
25 - 99AED 34.80
100 - 499AED 33.90
500+AED 33.05

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Technical Document

Specifications

Memory Size

64kbit

Organisation

8K x 8 bit

Interface Type

Parallel

Data Bus Width

8bit

Maximum Random Access Time

70ns

Mounting Type

Surface Mount

Package Type

SOIC

Pin Count

28

Dimensions

18.11 x 7.62 x 2.37mm

Maximum Operating Supply Voltage

5.5 V

Maximum Operating Temperature

+85 °C

Number of Words

8K

Minimum Operating Temperature

-40 °C

Minimum Operating Supply Voltage

2.7 V

Number of Bits per Word

8bit

Product details

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.