Infineon 256kbit SPI FRAM Memory 8-Pin SOIC, FM25W256-G

RS Stock No.: 125-4228Brand: InfineonManufacturers Part No.: FM25W256-G
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Technical Document

Specifications

Memory Size

256kbit

Organisation

32K x 8 bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

20ns

Mounting Type

Surface Mount

Package Type

SOIC

Pin Count

8

Dimensions

4.97 x 3.98 x 1.48mm

Length

4.97mm

Width

3.98mm

Maximum Operating Supply Voltage

5.5 V

Height

1.48mm

Maximum Operating Temperature

+85 °C

Minimum Operating Temperature

-40 °C

Minimum Operating Supply Voltage

2.7 V

Number of Words

32K

Number of Bits per Word

8bit

Automotive Standard

AEC-Q100

Product details

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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AED 38.45

Each (ex VAT)

AED 40.37

Each (inc VAT)

Infineon 256kbit SPI FRAM Memory 8-Pin SOIC, FM25W256-G
Select packaging type

AED 38.45

Each (ex VAT)

AED 40.37

Each (inc VAT)

Infineon 256kbit SPI FRAM Memory 8-Pin SOIC, FM25W256-G
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit price
1 - 9AED 38.45
10 - 49AED 28.95
50 - 99AED 28.35
100 - 499AED 27.85
500+AED 27.65

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Technical Document

Specifications

Memory Size

256kbit

Organisation

32K x 8 bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

20ns

Mounting Type

Surface Mount

Package Type

SOIC

Pin Count

8

Dimensions

4.97 x 3.98 x 1.48mm

Length

4.97mm

Width

3.98mm

Maximum Operating Supply Voltage

5.5 V

Height

1.48mm

Maximum Operating Temperature

+85 °C

Minimum Operating Temperature

-40 °C

Minimum Operating Supply Voltage

2.7 V

Number of Words

32K

Number of Bits per Word

8bit

Automotive Standard

AEC-Q100

Product details

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.