Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
8.6 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
2.78 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.2mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.7mm
Typical Gate Charge @ Vgs
33.7 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.26mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
AED 51.19
AED 2.048 Each (In a Pack of 25) (ex VAT)
AED 53.75
AED 2.15 Each (In a Pack of 25) (inc. VAT)
Standard
25
AED 51.19
AED 2.048 Each (In a Pack of 25) (ex VAT)
AED 53.75
AED 2.15 Each (In a Pack of 25) (inc. VAT)
Standard
25
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
25 - 100 | AED 2.048 | AED 51.19 |
125 - 600 | AED 1.26 | AED 31.50 |
625 - 1225 | AED 1.208 | AED 30.19 |
1250+ | AED 1.155 | AED 28.88 |
Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
8.6 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
2.78 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.2mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.7mm
Typical Gate Charge @ Vgs
33.7 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.26mm
Minimum Operating Temperature
-55 °C
Product details