Technical Document
Specifications
Channel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
800 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3 + Tab
Maximum Drain Source Resistance
20 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
6.7mm
Typical Gate Charge @ Vgs
5.5 nC @ 10 V
Width
3.7mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
1.7mm
Series
QFET
Minimum Operating Temperature
-55 °C
Product details
QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor
Fairchild Semiconductors new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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AED 2.45
Each (Supplied on a Reel) (ex VAT)
AED 2.572
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
10
AED 2.45
Each (Supplied on a Reel) (ex VAT)
AED 2.572
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
10
Technical Document
Specifications
Channel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
800 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3 + Tab
Maximum Drain Source Resistance
20 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
6.7mm
Typical Gate Charge @ Vgs
5.5 nC @ 10 V
Width
3.7mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
1.7mm
Series
QFET
Minimum Operating Temperature
-55 °C
Product details
QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor
Fairchild Semiconductors new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.