Fairchild ISL9V3040P3 IGBT, 21 A 450 V, 3-Pin TO-220AB, Through Hole
Technical Document
Specifications
Maximum Continuous Collector Current
21 A
Maximum Collector Emitter Voltage
450 V
Maximum Gate Emitter Voltage
±14V
Maximum Power Dissipation
150 W
Package Type
TO-220AB
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.67 x 4.7 x 16.3mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Product details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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AED 522.50
AED 10.45 Each (In a Tube of 50) (ex VAT)
AED 548.62
AED 10.972 Each (In a Tube of 50) (inc. VAT)
50
AED 522.50
AED 10.45 Each (In a Tube of 50) (ex VAT)
AED 548.62
AED 10.972 Each (In a Tube of 50) (inc. VAT)
50
Buy in bulk
| quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | AED 10.45 | AED 522.50 |
| 100 - 450 | AED 8.55 | AED 427.50 |
| 500 - 950 | AED 7.25 | AED 362.50 |
| 1000 - 2450 | AED 6.70 | AED 335.00 |
| 2500+ | AED 6.65 | AED 332.50 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Maximum Continuous Collector Current
21 A
Maximum Collector Emitter Voltage
450 V
Maximum Gate Emitter Voltage
±14V
Maximum Power Dissipation
150 W
Package Type
TO-220AB
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.67 x 4.7 x 16.3mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Product details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products