Technical Document
Specifications
Brand
Fuji ElectricMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
600 V
Maximum Power Dissipation
201 W
Package Type
P 630
Configuration
3 Phase
Mounting Type
PCB Mount
Channel Type
N
Pin Count
25
Switching Speed
20kHz
Transistor Configuration
3 Phase
Dimensions
128.5 x 84 x 14mm
Minimum Operating Temperature
-20 °C
Maximum Operating Temperature
+110 °C
Country of Origin
Japan
Product details
IPM (Intelligent Power Module) IGBT, V-Series, Fuji Electric
The Fuji Electric V-series Intelligent Power Modules (IPM) come equipped with drive, control and protection IGBT circuits. They are easy to implement in power control applications for AC servos, air conditioning equipment and elevators. Built-in protection functions optimize and increase the lifetime of IPM IGBTs thereby safeguarding high system reliability. The IPMs come equipped with protection against over-current, short circuit, control power voltage drop and over-heating, and include output alarm signals.
6MBP... Without Brake-Chopper
7MBP... With Brake-Chopper
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
AED 2,929.50
AED 146.475 Each (In a Box of 20) (ex VAT)
AED 3,075.98
AED 153.799 Each (In a Box of 20) (inc. VAT)
20
AED 2,929.50
AED 146.475 Each (In a Box of 20) (ex VAT)
AED 3,075.98
AED 153.799 Each (In a Box of 20) (inc. VAT)
20
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Technical Document
Specifications
Brand
Fuji ElectricMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
600 V
Maximum Power Dissipation
201 W
Package Type
P 630
Configuration
3 Phase
Mounting Type
PCB Mount
Channel Type
N
Pin Count
25
Switching Speed
20kHz
Transistor Configuration
3 Phase
Dimensions
128.5 x 84 x 14mm
Minimum Operating Temperature
-20 °C
Maximum Operating Temperature
+110 °C
Country of Origin
Japan
Product details
IPM (Intelligent Power Module) IGBT, V-Series, Fuji Electric
The Fuji Electric V-series Intelligent Power Modules (IPM) come equipped with drive, control and protection IGBT circuits. They are easy to implement in power control applications for AC servos, air conditioning equipment and elevators. Built-in protection functions optimize and increase the lifetime of IPM IGBTs thereby safeguarding high system reliability. The IPMs come equipped with protection against over-current, short circuit, control power voltage drop and over-heating, and include output alarm signals.
6MBP... Without Brake-Chopper
7MBP... With Brake-Chopper
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.