Technical Document
Specifications
Brand
Fuji ElectricMaximum Continuous Collector Current
15 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
155 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.9 x 5.03 x 20.95mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Product details
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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AED 27.20
Each (Supplied in a Tube) (ex VAT)
AED 28.56
Each (Supplied in a Tube) (inc VAT)
Production pack (Tube)
1
AED 27.20
Each (Supplied in a Tube) (ex VAT)
AED 28.56
Each (Supplied in a Tube) (inc VAT)
Production pack (Tube)
1
Buy in bulk
quantity | Unit price |
---|---|
1 - 4 | AED 27.20 |
5 - 14 | AED 25.80 |
15 - 29 | AED 24.40 |
30 - 59 | AED 23.15 |
60+ | AED 21.75 |
Technical Document
Specifications
Brand
Fuji ElectricMaximum Continuous Collector Current
15 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
155 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.9 x 5.03 x 20.95mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Product details
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.