Infineon OptiMOS™ Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 2N7002DWH6327XTSA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-363
Series
OptiMOS™
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
500 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
0.4 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
2
Width
1.25mm
Length
2mm
Minimum Operating Temperature
-55 °C
Height
0.8mm
Country of Origin
China
Product details
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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AED 787.50
AED 0.262 Each (On a Reel of 3000) (ex VAT)
AED 826.88
AED 0.275 Each (On a Reel of 3000) (inc. VAT)
3000
AED 787.50
AED 0.262 Each (On a Reel of 3000) (ex VAT)
AED 826.88
AED 0.275 Each (On a Reel of 3000) (inc. VAT)
3000
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Reel |
|---|---|---|
| 3000 - 3000 | AED 0.262 | AED 787.50 |
| 6000 - 12000 | AED 0.21 | AED 630.00 |
| 15000+ | AED 0.21 | AED 630.00 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-363
Series
OptiMOS™
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
500 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
0.4 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
2
Width
1.25mm
Length
2mm
Minimum Operating Temperature
-55 °C
Height
0.8mm
Country of Origin
China
Product details
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products